Invention Grant
- Patent Title: Passivation scheme for solar cells
- Patent Title (中): 太阳能电池的钝化方案
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Application No.: US14286665Application Date: 2014-05-23
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Publication No.: US09385247B2Publication Date: 2016-07-05
- Inventor: Valantis Vais , Alison Joan Lennon , Stuart Ross Wenham , Jing Jia Ji , Alison Maree Wenham , Jingnan Tong , Xi Wang
- Applicant: NewSouth Innovations Pty Limited
- Applicant Address: AU Sydney, NSW
- Assignee: NEWSOUTH INNOVATIONS PTY LIMITED
- Current Assignee: NEWSOUTH INNOVATIONS PTY LIMITED
- Current Assignee Address: AU Sydney, NSW
- Priority: AU2011904765 20111115
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L21/02 ; H01L31/0224 ; H01L31/18
Abstract:
A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidizing the exposed surface to form an oxide layer.
Public/Granted literature
- US20140251817A1 METAL CONTACT SCHEME AND PASSIVATION SCHEME FOR SOLAR CELLS Public/Granted day:2014-09-11
Information query
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