Invention Grant
- Patent Title: Semiconductor light emitting element and method of manufacturing the same
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US14279890Application Date: 2014-05-16
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Publication No.: US09385280B2Publication Date: 2016-07-05
- Inventor: Hirofumi Kawaguchi , Akinori Yoneda , Hisashi Kasai , Kazuki Kashimoto , Masafumi Itasaka
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Squire Patton Boggs (US) LLP
- Priority: JP2013-105270 20130517; JP2014-097945 20140509
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/40 ; H01L33/38 ; H01L33/36

Abstract:
A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.
Public/Granted literature
- US20140339587A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-11-20
Information query
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