Invention Grant
US09385318B1 Method to integrate a halide-containing ALD film on sensitive materials
有权
将含卤化物的ALD膜整合到敏感材料上的方法
- Patent Title: Method to integrate a halide-containing ALD film on sensitive materials
- Patent Title (中): 将含卤化物的ALD膜整合到敏感材料上的方法
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Application No.: US14811205Application Date: 2015-07-28
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Publication No.: US09385318B1Publication Date: 2016-07-05
- Inventor: Jon Henri
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L45/00

Abstract:
Various embodiments herein relate to methods and apparatus for depositing a bilayer barrier layer on a substrate. The bilayer barrier layer may include a first sub-layer designed to protect underlying halide-sensitive layers from damaging halide-containing chemistry, as well as a second sub-layer designed to protect underlying materials from damage due to oxidation. In a number of embodiments the first sub-layer is layer having a high carbon content, and the second layer is silicon nitride. The silicon nitride second sub-layer may be deposited with halide-containing chemistry that would otherwise damage halide-sensitive materials, if not for the presence of the first sub-layer. The resulting bilayer barrier layer provides high quality protection for underlying materials.
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