Invention Grant
- Patent Title: Real-space charge-transfer device and method thereof
- Patent Title (中): 实空电荷转移装置及其方法
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Application No.: US14573891Application Date: 2014-12-17
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Publication No.: US09385321B1Publication Date: 2016-07-05
- Inventor: Don D. Smith
- Applicant: Don D. Smith
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L47/02 ; H03K5/04 ; H03K5/1252
Abstract:
A real-space charge-transfer device is disclosed. In particular, a Gunn diode is disclosed having a conductive structure fabricated overlying its active region. A secondary signal, other than the normal Gunn diode signal, is generated by the Gunn diode based upon a characteristic of the overlying conductive structure. For example, when the conductive structure is a grate having N teeth the secondary signal will have N secondary oscillation cycles that occur during the duration of a single normal Gunn diode oscillation cycle.
Public/Granted literature
- US20160181523A1 REAL-SPACE CHARGE-TRANSFER DEVICE AND METHOD THEREOF Public/Granted day:2016-06-23
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