Invention Grant
US09385332B2 Organic-inorganic hybrid multilayer gate dielectrics for thin film transistors
有权
用于薄膜晶体管的有机 - 无机混合多层栅极电介质
- Patent Title: Organic-inorganic hybrid multilayer gate dielectrics for thin film transistors
- Patent Title (中): 用于薄膜晶体管的有机 - 无机混合多层栅极电介质
-
Application No.: US14848281Application Date: 2015-09-08
-
Publication No.: US09385332B2Publication Date: 2016-07-05
- Inventor: Tobin J. Marks , Young-geun Ha , Antonio Facchetti
- Applicant: Northwestern University
- Applicant Address: US IL Evanston
- Assignee: Northwestern University
- Current Assignee: Northwestern University
- Current Assignee Address: US IL Evanston
- Agent Karen K. Chan
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L29/66 ; H01L29/24 ; H01L29/49 ; H01L29/51 ; H01L21/441

Abstract:
Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.
Public/Granted literature
- US20160072085A1 Organic-Inorganic Hybrid Multilayer Gate Dielectrics for Thin Film Transistors Public/Granted day:2016-03-10
Information query
IPC分类: