Invention Grant
- Patent Title: Charge pump circuit capable of reducing reverse currents
- Patent Title (中): 电荷泵电路能够减少反向电流
-
Application No.: US14987775Application Date: 2016-01-05
-
Publication No.: US09385596B1Publication Date: 2016-07-05
- Inventor: Cheng-Te Yang
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsinchu Science Park, Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsinchu Science Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H02M3/07 ; H03K3/012 ; H03K5/159 ; H03K17/687 ; H03K5/00

Abstract:
A charge pump unit capable of reducing reverse current includes a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, and a second PMOS transistor. The first NMOS transistor and the first PMOS transistor are coupled in series and are controlled by a first clock signal. The second NMOS transistor and the second PMOS transistor are coupled in series and are controlled by a second clock signal. The first NMOS transistor is for receiving a first input voltage and the second NMOS transistor is for receiving a second input voltage. The first clock signal and the second clock signal transit at different time points. A rising edge of the first clock signal leads a respective falling edge of the second clock signal.
Public/Granted literature
- US20160197551A1 CHARGE PUMP CIRCUIT CAPABLE OF REDUCING REVERSE CURRENTS Public/Granted day:2016-07-07
Information query
IPC分类: