Invention Grant
- Patent Title: Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion
- Patent Title (中): 氧化铟锡上赤铁矿的原子层外延应用于太阳能转换
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Application No.: US14288998Application Date: 2014-05-28
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Publication No.: US09388499B2Publication Date: 2016-07-12
- Inventor: Alex B. Martinson , Shannon Riha , Peijun Guo , Jonathan D. Emery
- Applicant: UCHICAGO ARGONNE, LLC
- Applicant Address: US IL Chicago
- Assignee: UChicago Argonne, LLC
- Current Assignee: UChicago Argonne, LLC
- Current Assignee Address: US IL Chicago
- Agency: Foley & Lardner LLP
- Main IPC: C25B11/04
- IPC: C25B11/04 ; C25B1/00 ; H01G9/20 ; C23C16/455 ; C23C16/40 ; C30B25/18 ; C30B25/10 ; C30B29/16 ; C30B25/06 ; C30B25/02

Abstract:
A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (β-Fe2O3) which is deposited at low temperatures to provide 99% phase pure β-Fe2O3 thin films on indium tin oxide. Subsequent annealing produces pure α-Fe2O3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.
Public/Granted literature
- US20150345036A1 ATOMIC LAYER EPITAXY OF HEMATITE ON INDIUM TIN OXIDE FOR APPLICATION IN SOLAR ENERGY CONVERSION Public/Granted day:2015-12-03
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