Invention Grant
US09388499B2 Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion 有权
氧化铟锡上赤铁矿的原子层外延应用于太阳能转换

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion
Abstract:
A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (β-Fe2O3) which is deposited at low temperatures to provide 99% phase pure β-Fe2O3 thin films on indium tin oxide. Subsequent annealing produces pure α-Fe2O3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.
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