Invention Grant
US09389510B2 Patterning process and chemical amplified photoresist composition
有权
图案化工艺和化学放大光致抗蚀剂组合物
- Patent Title: Patterning process and chemical amplified photoresist composition
- Patent Title (中): 图案化工艺和化学放大光致抗蚀剂组合物
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Application No.: US14080430Application Date: 2013-11-14
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Publication No.: US09389510B2Publication Date: 2016-07-12
- Inventor: Chien-Wei Wang , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/095
- IPC: G03F7/095 ; G03F7/038 ; G03F7/039 ; G03F7/004 ; G03F7/20 ; G03F7/30 ; G03F7/32 ; G03F7/38 ; G03F7/11

Abstract:
A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo—acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer.
Public/Granted literature
- US20140134538A1 Patterning Process and Chemical Amplified Photoresist Composition Public/Granted day:2014-05-15
Information query
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