Invention Grant
US09390797B2 Driving method of variable resistance element and non-volatile memory device
有权
可变电阻元件和非易失性存储器件的驱动方法
- Patent Title: Driving method of variable resistance element and non-volatile memory device
- Patent Title (中): 可变电阻元件和非易失性存储器件的驱动方法
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Application No.: US13983017Application Date: 2012-12-11
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Publication No.: US09390797B2Publication Date: 2016-07-12
- Inventor: Shunsaku Muraoka , Satoru Mitani , Takeshi Takagi , Koji Katayama
- Applicant: PANASONIC CORPORATION
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-271894 20111213; JP2011-271900 20111213
- International Application: PCT/JP2012/007912 WO 20121211
- International Announcement: WO2013/088704 WO 20130620
- Main IPC: G11C11/21
- IPC: G11C11/21 ; G11C13/00

Abstract:
A method of driving a variable resistance element comprises: before a first write step is performed, applying an initial voltage pulse of a first polarity to change a resistance value of a metal oxide layer from a resistance value corresponding to an initial state of the metal oxide layer to another resistance value; wherein when the resistance value corresponding to the initial state is R0, the resistance value corresponding to a write state is RL, the resistance value corresponding to an erase state is RH, another resistance value is R2, a maximum value of the current flowing when the initial voltage pulse is applied is IbRL, a maximum value of the current flowing when the write voltage pulse is applied is IRL, and a maximum value of the current flowing when the erase voltage pulse is applied is IRH, R0>RH>R2≧RL, and |IRL|>|IbRL| are satisfied.
Public/Granted literature
- US20140050014A1 DRIVING METHOD OF VARIABLE RESISTANCE ELEMENT AND NON-VOLATILE MEMORY DEVICE Public/Granted day:2014-02-20
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