Invention Grant
- Patent Title: Electron emission source
- Patent Title (中): 电子发射源
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Application No.: US14599986Application Date: 2015-01-19
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Publication No.: US09390878B2Publication Date: 2016-07-12
- Inventor: Peng Liu , De-Jie Li , Chun-Hai Zhang , Duan-Liang Zhou , Bing-Chu Du , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN201410024419 20140120
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01J1/308 ; H01J1/312

Abstract:
An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein an electron collection layer is sandwiched between the semiconductor layer and the insulating layer, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer to collect electrons.
Public/Granted literature
- US20150206689A1 ELECTRON EMISSION SOURCE Public/Granted day:2015-07-23
Information query
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