Invention Grant
- Patent Title: Ion implanter and method of ion beam tuning
- Patent Title (中): 离子注入机和离子束调谐方法
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Application No.: US14852037Application Date: 2015-09-11
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Publication No.: US09390889B2Publication Date: 2016-07-12
- Inventor: Kazuhiro Watanabe , Yuuji Takahashi , Yusuke Ueno
- Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Current Assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Michael Best and Friedrich
- Priority: JP2014-184995 20140911
- Main IPC: H01J37/304
- IPC: H01J37/304 ; H01J37/317 ; H01J37/244

Abstract:
An energy analysis slit of an ion implanter is configured to enable switching between a standard slit opening used for implantation processing performed under a predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to tune an acceleration parameter for a radio frequency linear accelerator. The acceleration parameter is determined for the predetermined implantation condition so that at least a part of ions supplied to the radio frequency linear accelerator is accelerated to have target energy, and so that the beam current amount measured by a beam measurement unit is equivalent to a target beam current amount.
Public/Granted literature
- US20160079032A1 ION IMPLANTER AND METHOD OF ION BEAM TUNING Public/Granted day:2016-03-17
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