A semiconductor/dielectric interface having reduced interface trap density and a method of manufacturing the interface are disclosed. In an exemplary embodiment, the method comprises receiving a substrate, the substrate containing a semiconductor; preparing a surface of the substrate; forming a termination layer bonded to the semiconductor at the surface of the substrate; and depositing a dielectric layer above the termination layer, the depositing configured to not disrupt the termination layer. The forming of the termination layer may be configured to produce the termination layer having a single layer of oxygen atoms between the substrate and the dielectric layer.