Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
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Application No.: US14747674Application Date: 2015-06-23
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Publication No.: US09390916B2Publication Date: 2016-07-12
- Inventor: Yoshiro Hirose , Kenichi Suzaki
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2012-281539 20121225
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; H01L21/67 ; C23C16/02 ; C23C16/455 ; C23C16/52
Abstract:
A method of manufacturing a semiconductor device can enhance controllability of the diameters of grains of a film containing a predetermined element such as a silicon film when the film is formed. The method includes (a) forming a seed layer containing a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including alternately performing supplying a first source gas containing the predetermined element, an alkyl group and a halogen group to the substrate and supplying a second source gas containing the predetermined element and an amino group to the substrate, or by performing supplying the first source gas to the substrate a predetermined number of times; and (b) forming a film containing the predetermined element on the seed layer by supplying a third source gas containing the predetermined element and free of the alkyl group to the substrate.
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Information query
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