Invention Grant
- Patent Title: Multi-layer dielectric stack for plasma damage protection
- Patent Title (中): 用于等离子体损伤保护的多层电介质叠层
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Application No.: US14850069Application Date: 2015-09-10
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Publication No.: US09391024B2Publication Date: 2016-07-12
- Inventor: Bo Xie , Kang Sub Yim , Cheng Pan , Sure Ngo , Taewan Kim , Alexandros T. Demos
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/31 ; H01L23/532 ; H01L21/02 ; H01L21/768
Abstract:
Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.
Public/Granted literature
- US20160111373A1 MULTI-LAYER DIELECTRIC STACK FOR PLASMA DAMAGE PROTECTION Public/Granted day:2016-04-21
Information query
IPC分类:
