Invention Grant
US09391034B2 Interfacial alloy layer for improving electromigration (EM) resistance in solder joints
有权
界面合金层，用于改善焊点的电迁移（EM）电阻
- Patent Title: Interfacial alloy layer for improving electromigration (EM) resistance in solder joints
- Patent Title (中): 界面合金层，用于改善焊点的电迁移（EM）电阻
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Application No.: US13973434Application Date: 2013-08-22
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Publication No.: US09391034B2Publication Date: 2016-07-12
- Inventor: Hirokazu Noma , Yasumitsu Orii , Kazushige Toriyama
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Keivan Razavi
- Priority: JP2012-184528 20120823
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L21/56 ; H01L21/50
Abstract:
ProblemTo improve the electromigration (EM) resistance of a solder joint.SolutionThe present invention provides a unique structure for an interfacial alloy layer which is able to improve the electromigration (EM) resistance of a solder joint, and a unique method of forming this structure. More specifically, in this unique structure, a controlled interfacial alloy layer is provided on both sides of a solder joint. In order to form this structure, aging (maintenance of high-temperature conditions) is performed until an interfacial alloy layer of Cu3Sn has a thickness of at least 1.5 μm.
Public/Granted literature
- US20140061889A1 INTERFACIAL ALLOY LAYER FOR IMPROVING ELECTROMIGRATION (EM) RESISTANCE IN SOLDER JOINTS Public/Granted day:2014-03-06
Information query
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