Invention Grant
- Patent Title: Power rectifier using tunneling field effect transistor
- Patent Title (中): 功率整流器采用隧道场效应晶体管
-
Application No.: US14456303Application Date: 2014-08-11
-
Publication No.: US09391068B2Publication Date: 2016-07-12
- Inventor: Huichu Liu , Ramesh Vaddi , Vijaykrishnan Narayanan , Suman Datta
- Applicant: The Penn State Research Foundation
- Applicant Address: US PA University Park
- Assignee: The Penn State Research Foundation
- Current Assignee: The Penn State Research Foundation
- Current Assignee Address: US PA University Park
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: H02M3/335
- IPC: H02M3/335 ; H01L27/06 ; H02M7/219 ; H01L27/08

Abstract:
A power rectifier includes a stage having a first Tunneling Field-Effect Transistor (“TFET”) having a source, a gate, and a drain, a second TFET having a source, a gate, and a drain, a third TFET having a source, a gate, and a drain, and a fourth TFET having a source, a gate, and a drain such that the source of the first TFET, the source of the second TFET, the gate of the third TFET, and the gate of the fourth TFET are connected, the gate of the first TFET, the gate of the second TFET, the source of the third TFET and the source of the fourth TFET are connected, the drain of the first TFET and the drain of the third TFET are connected, and the drain of the second TFET and the drain of the fourth TFET are connected. Alternative embodiments are also disclosed.
Public/Granted literature
- US20150043260A1 POWER RECTIFIER USING TUNNELING FIELD EFFECT TRANSISTOR Public/Granted day:2015-02-12
Information query
IPC分类: