An imaging device includes pixels each of which includes a photoelectric converter including a p-n junction formed of a first semiconductor region and a second semiconductor region, an amplifying transistor configured to amplify a signal based on signal carriers, and a capacitance including a p-n junction formed of a third semiconductor region having the same conductivity type as the first semiconductor region and a fourth semiconductor region having the opposite conductivity type to the third semiconductor region. A doping impurity concentration of an impurity of the same conductivity type as the conductivity type of the third semiconductor region at the p-n junction interface of the capacitance is higher than a doping impurity concentration of an impurity of the same conductivity type as the conductivity type of the first semiconductor region at the p-n junction interface of the photoelectric converter.