Invention Grant
- Patent Title: Top-side contact structure and fabrication method thereof
- Patent Title (中): 顶侧接触结构及其制造方法
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Application No.: US14862321Application Date: 2015-09-23
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Publication No.: US09391139B1Publication Date: 2016-07-12
- Inventor: Hsiung-Shih Chang , Jui-Chun Chang , Li-Che Chen
- Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/06 ; H01L23/48 ; H01L21/762 ; H01L21/768 ; H01L21/311
Abstract:
A top-side contact structure is provided. The top-side contact structure includes a substrate. The substrate includes a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semiconductor layer on the insulating layer. The top-side contact structure also includes a first trench and a second trench formed in the second semiconductor layer and respectively extending along a first direction and a second direction. The first trench and the second trench connect to each other at an intersection point. The top-side contact structure also includes an insulating material filling the first trench and the second trench. The top-side contact structure also includes a contact plug formed at the intersection point and directly contacting the first semiconductor layer. A method for fabricating a top-side contact structure is also provided.
Information query
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