Invention Grant
- Patent Title: Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance
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Application No.: US14604606Application Date: 2015-01-23
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Publication No.: US09391179B2Publication Date: 2016-07-12
- Inventor: Donald R. Disney
- Applicant: Avogy, Inc.
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L29/66 ; H01L29/808
Abstract:
An embodiment of a vertical power device includes a III-nitride substrate, a drift region coupled to the III-nitride substrate and comprising a III-nitride material of a first conductivity type, and a channel region coupled to the drift region and comprising a III-nitride material of the first conductivity type. The vertical power device also includes a source region coupled to the channel region and comprising a III-nitride material of the first conductivity type, and a gate region coupled to the channel region. The gate region includes a III-nitride material of a second conductivity type. The vertical power device further includes a source-coupled region coupled to the drift region and electrically connected with the source region. The source-coupled region includes a III-nitride material of the second conductivity type.
Public/Granted literature
- US20150132900A1 VERTICAL GaN JFET WITH LOW GATE-DRAIN CAPACITANCE AND HIGH GATE-SOURCE CAPACITANCE Public/Granted day:2015-05-14
Information query
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