Invention Grant
- Patent Title: Field effect semiconductor component and method for producing it
- Patent Title (中): 场效应半导体元件及其制造方法
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Application No.: US14525398Application Date: 2014-10-28
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Publication No.: US09391192B2Publication Date: 2016-07-12
- Inventor: Markus Zundel , Karl-Heinz Bach , Andrew Christopher Graeme Wood
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Priority: DE102013111966 20131030
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/739 ; H01L29/10 ; H01L29/40 ; H01L29/423 ; H01L29/06 ; H01L29/08
Abstract:
What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.
Public/Granted literature
- US20150115353A1 FIELD EFFECT SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT Public/Granted day:2015-04-30
Information query
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