Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
-
Application No.: US13959357Application Date: 2013-08-05
-
Publication No.: US09391227B2Publication Date: 2016-07-12
- Inventor: Tadashi Sawayama , Takashi Usui , Akihiro Kawano , Hiroaki Naruse , Sho Suzuki , Takehito Okabe , Masatsugu Itahashi , Daisuke Uki
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon USA Inc. IP Division
- Priority: JP2012-174842 20120807
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L21/768 ; H01L31/18 ; H01L27/146

Abstract:
A substrate includes a first region having photoelectric conversion portions and a second region having an element included in a signal processing circuit. An insulator including first and second parts respectively arranged on the first and second regions is formed on the substrate. Openings are formed in the insulator and respectively superposed on the photoelectric conversion portions. A first member is formed in the openings and on the second part of the insulator after forming the openings. At least a portion of the first member arranged on the second region is removed. The first member is planarized after removing at least the portion of the first member. A second insulator is formed on the first and second regions after planarizing the first member. A through-hole is formed in a part of the second insulator. No planarization with grinding is performed after forming the second insulator and before forming the through-hole.
Public/Granted literature
- US20140045294A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2014-02-13
Information query
IPC分类: