Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
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Application No.: US14405721Application Date: 2012-06-04
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Publication No.: US09391268B2Publication Date: 2016-07-12
- Inventor: Yoshitaka Sasago
- Applicant: Yoshitaka Sasago
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- International Application: PCT/JP2012/064368 WO 20120604
- International Announcement: WO2013/183101 WO 20131212
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00 ; G11C13/00

Abstract:
The purpose of the present invention is to provide a semiconductor storage device, which has small resistance in the ON state, and a small leak current in the OFF state, and which has a small-sized select transistor used therein. In this semiconductor storage device, a channel of a first select transistor that selects a memory cell array is electrically connected to each of the adjacent memory cell arrays (see FIG. 1).
Public/Granted literature
- US20150155479A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2015-06-04
Information query
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