Invention Grant
US09391268B2 Semiconductor storage device 有权
半导体存储设备

Semiconductor storage device
Abstract:
The purpose of the present invention is to provide a semiconductor storage device, which has small resistance in the ON state, and a small leak current in the OFF state, and which has a small-sized select transistor used therein. In this semiconductor storage device, a channel of a first select transistor that selects a memory cell array is electrically connected to each of the adjacent memory cell arrays (see FIG. 1).
Public/Granted literature
Information query
Patent Agency Ranking
0/0