Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14527617Application Date: 2014-10-29
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Publication No.: US09391594B2Publication Date: 2016-07-12
- Inventor: Hae-Kang Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0060741 20140521
- Main IPC: H03K3/012
- IPC: H03K3/012 ; H03K17/16
Abstract:
A semiconductor device includes: a pre-emphasis control signal generation portion suitable for generating a pre-emphasis control signal for a pre-emphasis operation; and a plurality of output drivers, a portion of which performs the pre-emphasis operation based on the pre-emphasis control signal when an output operation is performed.
Public/Granted literature
- US20150341019A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-11-26
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