Invention Grant
US09396107B2 Memory system having memory controller with cache memory and NVRAM and method of operating same
有权
具有高速缓冲存储器和NVRAM的存储器控制器的存储器系统及其操作方法
- Patent Title: Memory system having memory controller with cache memory and NVRAM and method of operating same
- Patent Title (中): 具有高速缓冲存储器和NVRAM的存储器控制器的存储器系统及其操作方法
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Application No.: US14079661Application Date: 2013-11-14
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Publication No.: US09396107B2Publication Date: 2016-07-19
- Inventor: Joon-Ho Lee , Hyun-Seok Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0129094 20121114
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02 ; G06F9/44 ; G06F12/10

Abstract:
In a memory system including a flash memory and a memory controller having a cache memory and a nonvolatile random access memory (NVRAM), a method of operating the memory system includes; receiving a write request specifying a write operation directed to a page of a designated active write block in the flash memory, storing a page mapping table for the active write block in the cache memory, generating update information for the page mapping table stored in the cache memory as a result of executing the write operation, and storing the update information in the NVRAM, and storing an updated version of the page mapping table in the flash memory after execution of the write operation is complete.
Public/Granted literature
- US20140136767A1 MEMORY SYSTEM HAVING MEMORY CONTROLLER WITH CACHE MEMORY AND NVRAM AND METHOD OF OPERATING SAME Public/Granted day:2014-05-15
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