Invention Grant
- Patent Title: Method for producing MROM memory based on OTP memory
- Patent Title (中): 基于OTP存储器生成MROM存储器的方法
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Application No.: US14398753Application Date: 2013-05-09
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Publication No.: US09397106B2Publication Date: 2016-07-19
- Inventor: Shuming Guo
- Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: CSMC TECHNOLOGIES FABI CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FABI CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Polsinelli PC
- Priority: CN201210141757 20120509
- International Application: PCT/CN2013/075364 WO 20130509
- International Announcement: WO2013/166974 WO 20131114
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L27/115 ; H01L27/02 ; G11C17/12 ; H01L27/112

Abstract:
A method of producing a Macro Read Only Memory (MROM) memory based on a One Time Programmable (OTP) memory is provided. The method includes: removing a floating gate of a second P-type Metal Oxide Semiconductor (PMOS) transistor of an OTP memory cell for storing data “0” in an OTP memory map, such that the OTP memory cell being transferred to a MROM memory cell for storing data “0”, and retaining an original structure of the OTP memory cell for storing data “1” in the OTP memory map, such that the original structure being used as a MROM memory cell for storing data “1”, thus forming a MROM memory map; and producing a MROM memory according to a MROM memory map. The OTP memory map is debugged to determine data which can be changed into the MROM memory map, and an OTP process can be transferred into a MROM process by adjusting only one mask during a producing process.
Public/Granted literature
- US20150143320A1 METHOD FOR PRODUCING MROM MEMORY BASED ON OTP MEMORY Public/Granted day:2015-05-21
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