Invention Grant
- Patent Title: Silicon carbide powder production method
- Patent Title (中): 碳化硅粉末生产方法
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Application No.: US14368452Application Date: 2012-12-28
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Publication No.: US09399583B2Publication Date: 2016-07-26
- Inventor: Byung Sook Kim
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: KR10-2011-0144930 20111228
- International Application: PCT/KR2012/011712 WO 20121228
- International Announcement: WO2013/100693 WO 20130704
- Main IPC: C01B31/36
- IPC: C01B31/36

Abstract:
A method for preparing silicon carbide powder according to an embodiment of the present disclosure includes the steps of: mixing a silicon (Si) source with a carbon (C) source including a solid carbon source or an organic carbon compound, and a silicon dioxide (SiO2) source, to form a mixture; and allowing the mixture to react, wherein the molar ratio of silicon dioxide in the silicon dioxide source to the sum of silicon in the silicon source and carbon in the carbon source is 0.01:1 to 0.3:1.
Public/Granted literature
- US20140356626A1 Silicon Carbide Powder Production Method Public/Granted day:2014-12-04
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