A silicon focus ring in a processing chamber of a plasma etching apparatus is provided. The silicon focus ring comprises: silicon wastes an amount of which is determined based on a content of impurity in the silicon wastes and a target value of an electrical resistance of the silicon focus ring; a silicon source material an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring; and impurity an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring. The target value of the electrical resistance of the silicon focus ring is about 2Ω.