Invention Grant
- Patent Title: Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell
- Patent Title (中): 烧结氧化物材料,其制造方法,溅射靶,氧化物透明导电膜,其制造方法和太阳能电池
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Application No.: US13876278Application Date: 2011-09-27
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Publication No.: US09399815B2Publication Date: 2016-07-26
- Inventor: Hideto Kuramochi , Keitaro Matsumaru , Ryo Akiike , Kentaro Utsumi , Tetsuo Shibutami
- Applicant: Hideto Kuramochi , Keitaro Matsumaru , Ryo Akiike , Kentaro Utsumi , Tetsuo Shibutami
- Applicant Address: JP Yamaguchi
- Assignee: TOSOH CORPORATION
- Current Assignee: TOSOH CORPORATION
- Current Assignee Address: JP Yamaguchi
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2010-218535 20100929; JP2010-273490 20101208
- International Application: PCT/JP2011/072091 WO 20110927
- International Announcement: WO2012/043570 WO 20120405
- Main IPC: C23C14/08
- IPC: C23C14/08 ; C23C14/34 ; C23C14/35 ; C01G19/00 ; C04B35/01 ; C04B35/457 ; H01B1/08 ; H01L31/0224 ; H01L31/0749 ; H01L31/18 ; C04B35/626 ; C04B35/645

Abstract:
The invention provides an oxide sintered compact 2 composed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase, the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying formulas (1) and (2) in terms of atomic ratio, as well as a sputtering target. There are further provided an oxide transparent conductive film formed using the sputtering target, and a solar cell. Sn/(In+Sn+Sr)=0.01-0.11 (1) Sr/(In+Sn+Sr)=0.0005-0.004 (2) [In formulas (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively.]
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