Invention Grant
- Patent Title: Magnetron source, magnetron sputtering apparatus and magnetron sputtering method
- Patent Title (中): 磁控管源,磁控溅射装置和磁控溅射法
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Application No.: US13977314Application Date: 2011-09-30
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Publication No.: US09399817B2Publication Date: 2016-07-26
- Inventor: Yangchao Li , Bo Geng , Xuewei Wu , Guoqing Qiu , Xu Liu
- Applicant: Yangchao Li , Bo Geng , Xuewei Wu , Guoqing Qiu , Xu Liu
- Applicant Address: CN Beijing
- Assignee: Beijing NMC Co., Ltd.
- Current Assignee: Beijing NMC Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Locke Lord LLP
- Agent Howard M. Gitten
- Priority: CN201010613102 20101229
- International Application: PCT/CN2011/080418 WO 20110930
- International Announcement: WO2012/088936 WO 20120705
- Main IPC: C23C14/35
- IPC: C23C14/35 ; H01J37/34

Abstract:
Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.
Public/Granted literature
- US20130277205A1 MAGNETRON SOURCE, MAGNETRON SPUTTERING APPARATUS AND MAGNETRON SPUTTERING METHOD Public/Granted day:2013-10-24
Information query
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