Invention Grant
US09399822B2 Liquid compositions and methods of fabricating a semiconductor device using the same 有权
液体组合物和使用其制备半导体器件的方法

Liquid compositions and methods of fabricating a semiconductor device using the same
Abstract:
The present inventive concepts provide a liquid composition for etching a metal containing copper. The liquid composition may include hydrogen peroxide in a range of about 0.1 wt % to about 10 wt % and a buffer solution in a range of about 0.1 wt % to about 10 wt %. The buffer solution may include citrate. The liquid composition may have a pH in a range of about 4.0 to about 7.0.
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