Invention Grant
US09400421B2 Mask blank substrate, mask blank, reflective mask blank, transfer mask, reflective mask, and methods of manufacturing the same
有权
掩模空白基板,掩模板,反光掩模板,转印掩模,反射掩模及其制造方法
- Patent Title: Mask blank substrate, mask blank, reflective mask blank, transfer mask, reflective mask, and methods of manufacturing the same
- Patent Title (中): 掩模空白基板,掩模板,反光掩模板,转印掩模,反射掩模及其制造方法
-
Application No.: US14118479Application Date: 2012-05-15
-
Publication No.: US09400421B2Publication Date: 2016-07-26
- Inventor: Tatsuya Sasaki , Takahito Nishimura
- Applicant: Tatsuya Sasaki , Takahito Nishimura
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-112185 20110519
- International Application: PCT/JP2012/062373 WO 20120515
- International Announcement: WO2012/157629 WO 20121122
- Main IPC: G03F1/24
- IPC: G03F1/24 ; B32B3/02 ; G03F1/38 ; G03F1/60 ; G03F1/22

Abstract:
A mask blank substrate is provided with a substrate mark comprising an oblique section. The inclination angle of the substrate mark with respect to a main surface is greater than 45° and less than 90° and the distance from the boundary between the main surface and the substrate mark to the outer periphery of the mask blank substrate is less than 1.5 mm.
Public/Granted literature
Information query