Invention Grant
US09400744B2 Magnetic random access memory journal for multi-level cell flash memory
有权
用于多级单元闪存的磁性随机存取存储器
- Patent Title: Magnetic random access memory journal for multi-level cell flash memory
- Patent Title (中): 用于多级单元闪存的磁性随机存取存储器
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Application No.: US14065589Application Date: 2013-10-29
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Publication No.: US09400744B2Publication Date: 2016-07-26
- Inventor: Trevor Smith , Ashwin Kamath
- Applicant: Mangstor, Inc.
- Applicant Address: US TX Austin
- Assignee: MANGSTOR, INC.
- Current Assignee: MANGSTOR, INC.
- Current Assignee Address: US TX Austin
- Agency: Andrews Kurth LLP
- Agent Sean S. Wooden
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G06F12/02 ; G06F11/14 ; G06F13/00 ; G06F12/08

Abstract:
A flash memory system comprises a logic block interface operable to receive a write command from a host computer, the write command specifying data and a write destination address in a flash memory device, the flash memory device operable to store data at a complementary address corresponding to the specified write destination address. The system further comprises a journal communicatively coupled to the flash memory device and the logic block interface operable to temporarily store data from the complementary address of the flash memory device, and to provide the stored data in the journal to be restored to the flash memory device at the complementary address in the event of an error occurring while executing the write command.
Public/Granted literature
- US20140122779A1 MAGNETIC RANDOM ACCESS MEMORY JOURNAL FOR MULTI-LEVEL CELL FLASH MEMORY Public/Granted day:2014-05-01
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