Invention Grant
US09401193B2 Memory device refreshing word line accessed in previous write operation
有权
在以前的写入操作中访问的存储器件刷新字线
- Patent Title: Memory device refreshing word line accessed in previous write operation
- Patent Title (中): 在以前的写入操作中访问的存储器件刷新字线
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Application No.: US14691303Application Date: 2015-04-20
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Publication No.: US09401193B2Publication Date: 2016-07-26
- Inventor: Mun-Phil Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0184129 20141219
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C8/08 ; G11C8/12
Abstract:
A memory device includes a memory bank including a plurality of word lines, and a word line controller capable of activating a first word line, which is accessed during a previous write operation, among the plurality of word lines, while activating a second word line corresponding to an input address among the plurality of word lines, during an active operation.
Public/Granted literature
- US20160180904A1 MEMORY DEVICE Public/Granted day:2016-06-23
Information query
