Invention Grant
US09401194B2 Fast programming of magnetic random access memory (MRAM) 有权
磁性随机存取存储器(MRAM)的快速编程

Fast programming of magnetic random access memory (MRAM)
Abstract:
A method of programming a MTJ includes selecting a MTJ that is coupled to an access transistor at the drain of the access transistor. The gate of the access transistor is coupled to a selected word line (WL), the selected WL is substantially at a first voltage, Vdd; whereas the WLs that are not coupled to the MTJ are left to float. A second voltage, Vx, is applied to the unselected bit lines (BLs) and further applied to a source line (SL), the SL being coupled to the source of the access transistor. A third voltage, Vdd or 0 Volts, is applied to a selected BL, the selected BL is coupled the MTJ. The first voltage is applied to a SL, the SL is coupled to the source of the access transistor thereby causing the WL to boot above the first voltage.
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