Invention Grant
- Patent Title: Fast programming of magnetic random access memory (MRAM)
- Patent Title (中): 磁性随机存取存储器(MRAM)的快速编程
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Application No.: US14253192Application Date: 2014-04-15
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Publication No.: US09401194B2Publication Date: 2016-07-26
- Inventor: Ebrahim Abedifard , Parviz Keshtbod
- Applicant: Avalanche Technology, Inc.
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Maryam Imam; Bing K. Yen
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16

Abstract:
A method of programming a MTJ includes selecting a MTJ that is coupled to an access transistor at the drain of the access transistor. The gate of the access transistor is coupled to a selected word line (WL), the selected WL is substantially at a first voltage, Vdd; whereas the WLs that are not coupled to the MTJ are left to float. A second voltage, Vx, is applied to the unselected bit lines (BLs) and further applied to a source line (SL), the SL being coupled to the source of the access transistor. A third voltage, Vdd or 0 Volts, is applied to a selected BL, the selected BL is coupled the MTJ. The first voltage is applied to a SL, the SL is coupled to the source of the access transistor thereby causing the WL to boot above the first voltage.
Public/Granted literature
- US20160078916A1 FAST PROGRAMMING OF MAGNETIC RANDOM ACCESS MEMORY (MRAM) Public/Granted day:2016-03-17
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