A memory driving circuit includes a current source configured to output a second current, a first switching unit configured to undergo switching to connect to the current source selectively to output the second current, a voltage generating unit configured to provide a reference voltage, a capacitive energy storage unit configured to store energy according to the reference voltage, a third switching unit configured to undergo switching to connect the voltage generating unit and the capacitive energy storage unit selectively, a second switching unit configured to undergo switching to connect the capacitive energy storage unit selectively to output a third current, and a current output terminal configured to output the second current, the third current, or the sum of the second current and the third current.