Invention Grant
US09401208B2 Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
有权
具有用于三元内容可寻址存储器应用的双结的磁性随机存取存储器单元
- Patent Title: Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
- Patent Title (中): 具有用于三元内容可寻址存储器应用的双结的磁性随机存取存储器单元
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Application No.: US14665459Application Date: 2015-03-23
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Publication No.: US09401208B2Publication Date: 2016-07-26
- Inventor: Bertrand Cambou
- Applicant: Crocus Technology SA
- Applicant Address: FR Grenoble
- Assignee: CROCUS TECHNOLOGY SA
- Current Assignee: CROCUS TECHNOLOGY SA
- Current Assignee Address: FR Grenoble
- Agency: Pearne & Gordon LLP
- Priority: EP11290150 20110328
- Main IPC: G11C15/00
- IPC: G11C15/00 ; G11C15/02 ; G11C11/56 ; G11C15/04
Abstract:
An MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization; a second tunnel barrier layer between the soft ferromagnetic layer and a second hard ferromagnetic layer having a second storage magnetization; the first storage magnetization being freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold; the first high predetermined temperature threshold being higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.
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