Invention Grant
US09401230B2 Cu-Ni-Si-Co copper alloy for electronic materials and manufacturing method thereof
有权
用于电子材料的Cu-Ni-Si-Co铜合金及其制造方法
- Patent Title: Cu-Ni-Si-Co copper alloy for electronic materials and manufacturing method thereof
- Patent Title (中): 用于电子材料的Cu-Ni-Si-Co铜合金及其制造方法
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Application No.: US13993648Application Date: 2011-11-11
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Publication No.: US09401230B2Publication Date: 2016-07-26
- Inventor: Hiroshi Kuwagaki
- Applicant: Hiroshi Kuwagaki
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2010-277279 20101213
- International Application: PCT/JP2011/076082 WO 20111111
- International Announcement: WO2012/081342 WO 20120621
- Main IPC: C22F1/08
- IPC: C22F1/08 ; C22C9/06 ; C22C9/10 ; C22F1/00 ; H01B1/02 ; C22F1/06

Abstract:
Cu—Ni—Si—Co copper alloy strip having excellent balance between strength and electrical conductivity which can prevent the drooping curl is provided. The copper alloy strip for an electronic materials contains 1.0-2.5% by mass of Ni, 0.5-2.5% by mass of Co, 0.3-1.2% by mass of Si, and the remainder comprising Cu and unavoidable impurities, wherein the copper alloy strip satisfies both of the following (a) and (b) as determined by means of X-ray diffraction pole figure measurement based on a rolled surface: (a) among a diffraction peak intensities obtained by β scanning at α=20° in a {200} pole figure, a peak height at β angle 145° is not more than 5.2 times that of standard copper powder; (b) among a diffraction peak intensities obtained by β scanning at α=75° in a {111} pole figure, a peak height at β angle 185° is not less than 3.4 times that of standard copper powder.
Public/Granted literature
- US20130263978A1 Cu-Ni-Si-Co COPPER ALLOY FOR ELECTRONIC MATERIALS AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-10-10
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