Invention Grant
US09401274B2 Methods and systems for dopant activation using microwave radiation
有权
使用微波辐射的掺杂剂激活的方法和系统
- Patent Title: Methods and systems for dopant activation using microwave radiation
- Patent Title (中): 使用微波辐射的掺杂剂激活的方法和系统
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Application No.: US14688002Application Date: 2015-04-16
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Publication No.: US09401274B2Publication Date: 2016-07-26
- Inventor: Chun-Hsiung Tsai , Huai-Tei Yang , Kuo-Feng Yu , Kei-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/02 ; H05B6/80 ; H01L21/324
Abstract:
A semiconductor structure includes a substrate and a source/drain (S/D) junction. The S/D junction is associated with the substrate and includes a semiconductor material. The semiconductor material includes germanium and has a percentage composition of the germanium between about 50% and about 95%.
Public/Granted literature
- US20150228485A1 METHODS AND SYSTEMS FOR DOPANT ACTIVATION USING MICROWAVE RADIATION Public/Granted day:2015-08-13
Information query
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