Invention Grant
- Patent Title: Word line with multi-layer cap structure
- Patent Title (中): 字线多层帽结构
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Application No.: US14476176Application Date: 2014-09-03
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Publication No.: US09401275B2Publication Date: 2016-07-26
- Inventor: Keita Akasaki , Hirotada Tobita
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L21/033 ; H01L21/768 ; H01L27/115 ; H01L21/308
Abstract:
Word lines are formed from a stack of layers that includes a metal (e.g. tungsten) layer with an overlying multi-layer cap structure. The multi-layer cap structure includes a layer with a low etch rate to protect metal from damage during anisotropic etching. The multi-layer cap structure includes a layer with stress (e.g. tensile) that is opposite to the stress of the metal (e.g. compressive) to provide low combined stress.
Public/Granted literature
- US20160064276A1 Word Line with Multi-Layer Cap Structure Public/Granted day:2016-03-03
Information query
IPC分类:
