Invention Grant
- Patent Title: Transistor gate and process for making transistor gate
- Patent Title (中): 晶体管栅极和制造晶体管栅极的工艺
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Application No.: US13918648Application Date: 2013-06-14
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Publication No.: US09401279B2Publication Date: 2016-07-26
- Inventor: Naoki Takeguchi
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/285 ; H01L29/78 ; H01L29/49
Abstract:
A transistor gate is formed of a stack of layers including a polysilicon layer and a tungsten layer separated by a barrier layer. A titanium layer reduces interface resistance. A tungsten liner reduces sheet resistance. The tungsten liner, a tungsten nitride barrier layer, and the tungsten layer may be formed sequentially in the same chamber.
Public/Granted literature
- US20140367804A1 TRANSISTOR GATE AND PROCESS FOR MAKING TRANSISTOR GATE Public/Granted day:2014-12-18
Information query
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