Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US14732179Application Date: 2015-06-05
-
Publication No.: US09401284B2Publication Date: 2016-07-26
- Inventor: Hiroshi Kawakubo
- Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Applicant Address: JP Yokohama-shi
- Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee Address: JP Yokohama-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-242437 20111104
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/306 ; H01L23/00 ; H01L23/36
Abstract:
A semiconductor device includes: a substrate comprised by gallium arsenide; an active layer provided on the substrate; a first nickel-plated layer provided on a lower face of the substrate facing the active layer; a copper-plated layer provided on a lower face of the first nickel-plated layer; and a second nickel-plated layer provided on a lower face of the copper-plated layer.
Public/Granted literature
- US20150270137A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-09-24
Information query
IPC分类:
