Invention Grant
US09401301B2 Semiconductor device having a gate that is buried in an active region and a device isolation film
有权
具有掩埋在有源区中的栅极和器件隔离膜的半导体器件
- Patent Title: Semiconductor device having a gate that is buried in an active region and a device isolation film
- Patent Title (中): 具有掩埋在有源区中的栅极和器件隔离膜的半导体器件
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Application No.: US14340489Application Date: 2014-07-24
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Publication No.: US09401301B2Publication Date: 2016-07-26
- Inventor: Kang Yoo Song
- Applicant: SK HYNIX INC.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2014-0036798 20140328
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/762 ; H01L29/66 ; H01L29/423 ; H01L29/06 ; H01L29/45 ; H01L21/306 ; H01L21/28 ; H01L21/285 ; H01L21/265 ; H01L29/417 ; H01L29/78
Abstract:
A semiconductor device includes an active region with a first gate trench formed when a gate region is etched to a first depth, a device isolation film defining the active region and including a second gate-trench formed when a gate region is etched to a second depth, a gate buried below the first gate trench and the second gate trench, and a source plug and a drain plug formed when a conductive material is deposited in a source region and a drain region of the active region.
Public/Granted literature
- US20150279998A1 SEMICONDUCTOR DEVICE HAVING FIN CHANNEL AND METHOD FOR FORMING THE SAME Public/Granted day:2015-10-01
Information query
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