Invention Grant
- Patent Title: Method to form trench structure for replacement channel growth
- Patent Title (中): 形成沟槽结构以替代通道生长的方法
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Application No.: US14170887Application Date: 2014-02-03
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Publication No.: US09401310B2Publication Date: 2016-07-26
- Inventor: Ying Zhang , Hua Chung
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/033 ; H01L21/311
Abstract:
Embodiments may include a method of semiconductor patterning including forming a first trench bordered by a first spacer material. The method may involve forming a second trench bordered by a second spacer material formed conformally around the first spacer material. The method may include filling the second trench with a semiconductor material.
Public/Granted literature
- US20150221556A1 METHOD TO FORM TRENCH STRUCTURE FOR REPLACEMENT CHANNEL GROWTH Public/Granted day:2015-08-06
Information query
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