Invention Grant
US09401311B2 Self aligned structure and method for high-K metal gate work function tuning
有权
用于高K金属栅极功能调谐的自对准结构和方法
- Patent Title: Self aligned structure and method for high-K metal gate work function tuning
- Patent Title (中): 用于高K金属栅极功能调谐的自对准结构和方法
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Application No.: US14607436Application Date: 2015-01-28
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Publication No.: US09401311B2Publication Date: 2016-07-26
- Inventor: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/8238 ; H01L27/092 ; H01L21/762 ; H01L29/66 ; H01L21/02 ; H01L21/28 ; H01L29/51 ; H01L29/49
Abstract:
A semiconductor device and a method for fabricating the device. The method includes: forming a STI in a substrate having a nFET and a pFET region; depositing a high-k layer and a TiN layer; depositing a polycrystalline silicon layer; forming a block level litho layer; removing a portion of the polycrystalline silicon layer; removing the block level litho layer; forming a first protective layer; depositing a fill layer above the pFET region; removing the first protective layer; cutting the TiN layer and the high-k layer to expose a portion of the STI; depositing a second protective layer on the STI; removing the fill layer; removing the TiN layer above the pFET region; treating the high-k layer with a work function tuning process; removing the polycrystalline silicon layer and TiN layer; and depositing a metal layer on the high-k layer and the second protective layer.
Public/Granted literature
- US20150318284A1 SELF ALIGNED STRUCTURE AND METHOD FOR HIGH-K METAL GATE WORK FUNCTION TUNING Public/Granted day:2015-11-05
Information query
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