Invention Grant
US09401325B2 Planar polysilicon regions for precision resistors and electrical fuses and method of fabrication
有权
用于精密电阻和电气保险丝的平面多晶硅区域及其制造方法
- Patent Title: Planar polysilicon regions for precision resistors and electrical fuses and method of fabrication
- Patent Title (中): 用于精密电阻和电气保险丝的平面多晶硅区域及其制造方法
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Application No.: US14285872Application Date: 2014-05-23
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Publication No.: US09401325B2Publication Date: 2016-07-26
- Inventor: Anthony I-Chih Chou , Arvind Kumar , Renee T. Mo , Shreesh Narasimha
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machine Corporation
- Current Assignee: International Business Machine Corporation
- Current Assignee Address: US NY Armonk
- Agent Steven J. Meyers; Howard M. Cohn
- Main IPC: H01L29/86
- IPC: H01L29/86 ; H01L23/525 ; H01L49/02 ; H01L21/84
Abstract:
A semiconductor structure providing a precision resistive element and method of fabrication is disclosed. Polysilicon is embedded in a silicon substrate. The polysilicon may be doped to control the resistance. Embodiments may include resistors, eFuses, and silicon-on-insulator structures. Some embodiments may include non-rectangular cross sections.
Public/Granted literature
- US20140252539A1 PLANAR POLYSILICON REGIONS FOR PRECISION RESISTORS AND ELECTRICAL FUSES AND METHOD OF FABRICATION Public/Granted day:2014-09-11
Information query
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