Invention Grant
- Patent Title: Electric contact structure having a diffusion barrier for an electronic device and method for manufacturing the electric contact structure
- Patent Title (中): 具有电子器件扩散阻挡层的电接触结构及其制造方法
-
Application No.: US14865261Application Date: 2015-09-25
-
Publication No.: US09401328B2Publication Date: 2016-07-26
- Inventor: Andrea Paleari , Lorenzo Gola , Federica Ronchi , Sonia Pirotta
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Gardere Wynne Sewell LLP
- Priority: ITTO2014A1090 20141222
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/532 ; H01L21/768 ; H01L23/528 ; H01L21/288 ; H01L21/285

Abstract:
An electric contact structure includes a first structural layer; a second structural layer made of dielectric material extending over the first structural layer; and an intermediate layer made of conductive material extending between the first structural layer and the second structural layer. A trench extends in the second structural layer delimited laterally by a wall of the second structural layer and at the bottom by a surface region of the intermediate layer. A diffusion barrier extends in the trench covering the surface region of the intermediate layer and the wall of the second structural layer. The diffusion barrier is a TiW—TiN—TiW tri-layer.
Public/Granted literature
Information query
IPC分类: