Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14801404Application Date: 2015-07-16
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Publication No.: US09401333B2Publication Date: 2016-07-26
- Inventor: Keiju Yamada , Masaaki Ishida
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P
- Priority: JP2011-019273 20110131
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/31 ; H01L23/498 ; H01L23/528 ; H01L21/56 ; H01L23/522 ; H01L23/50 ; H01L23/00

Abstract:
According to one embodiment, a semiconductor device includes a circuit substrate, a semiconductor element, a sealing resin layer, and a conductive shielding layer. The circuit substrate includes an insulating layer, a plurality of interconnections forming first interconnection layers provided on an upper surface side of the insulating layer, a plurality of interconnections forming second interconnection layers provided on a lower surface side of the insulating layer, and a plurality of vias penetrating from the upper surface to the lower surface of the insulating layer. The semiconductor element is mounted on the upper surface side of the circuit substrate. The conductive shielding layer covers the sealing resin layer and part of an end portion of the circuit substrate. Any of the plurality of vias and the conductive shielding layer are electrically connected.
Public/Granted literature
- US20150325530A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-11-12
Information query
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