Invention Grant
US09401340B2 Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device
有权
半导体器件和陶瓷电路基板，以及半导体器件的制造方法
- Patent Title: Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device
- Patent Title (中): 半导体器件和陶瓷电路基板，以及半导体器件的制造方法
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Application No.: US14433764Application Date: 2013-10-07
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Publication No.: US09401340B2Publication Date: 2016-07-26
- Inventor: Shuji Nishimoto , Yoshiyuki Nagatomo , Toshiyuki Nagase
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Nicholas J DiCeglie, Jr.
- Priority: JP2012-224257 20121009
- International Application: PCT/JP2013/077217 WO 20131007
- International Announcement: WO2014/057902 WO 20140417
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/373 ; H01L23/473 ; H01L25/07 ; H01L25/18 ; H01L23/498 ; C04B37/02 ; H01L33/64
Abstract:
A semiconductor device comprises a circuit layer composed of a conductive material, and a semiconductor element mounted on the circuit layer, wherein an underlayer having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer, a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one of metal particles and metal oxide particles is formed on the underlayer, and the circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.
Public/Granted literature
- US20150255419A1 SEMICONDUCTOR DEVICE AND CERAMIC CIRCUIT SUBSTRATE, AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2015-09-10
Information query
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