Invention Grant
- Patent Title: Directional FinFET capacitor structures
- Patent Title (中): 方向性FinFET电容器结构
-
Application No.: US14498322Application Date: 2014-09-26
-
Publication No.: US09401357B2Publication Date: 2016-07-26
- Inventor: Hong Chun
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Sayfarth Shaw LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L23/522 ; H01L49/02 ; H01L29/78 ; H01L27/08
Abstract:
A method for fabricating a capacitor within a FinFET device includes patterning a first gate interconnect material having a first recess. The method also includes patterning a first trench interconnect material coupled to the first gate interconnect material at the first recess to form a first plate of a FinFET capacitive structure.
Public/Granted literature
- US20150249081A1 DIRECTIONAL FINFET CAPACITOR STRUCTURES Public/Granted day:2015-09-03
Information query
IPC分类:
