Invention Grant
- Patent Title: Semiconductor devices including etching stop films
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Application No.: US14859764Application Date: 2015-09-21
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Publication No.: US09401360B2Publication Date: 2016-07-26
- Inventor: Jong Pil Kim , Woncheol Jeong
- Applicant: Jong Pil Kim , Woncheol Jeong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2010-0099954 20101013
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L27/092 ; H01L21/8238 ; H01L23/528 ; H01L23/532

Abstract:
A semiconductor device may include a substrate including an NMOS region and a PMOS region. A gate structure can include a gate pattern and a spacer pattern, where the gate structure is on the substrate. A first etching stop film can be on the substrate in the NMOS region and a second etching stop film can be on the substrate in the PMOS region. A contact hole can penetrate the first and second etching stop films and a contact plug can be in the contact hole. A thickness of the first etching stop film can be greater than a thickness of the second etching stop film. Related methods are also disclosed.
Public/Granted literature
- US20160013188A1 SEMICONDUCTOR DEVICES INCLUDING ETCHING STOP FILMS Public/Granted day:2016-01-14
Information query
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